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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence D209L
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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D209L fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
·High Reliability
isc Product Specification
D209L
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base voltage
9V
IC Collector Current-Continuous
Collector Power Dissipation
PC @ TC=25
TJ Junction Temperature
12 A
100 W
150
Tstg Storage Temperature Range
-55~150
isc websitewww.iscsemi.cn
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