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PDF SUB70N04-10 Data sheet ( Hoja de datos )
| Número de pieza | SUB70N04-10 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay | |
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SUP/SUB70N04-10
Vishay Siliconix
N-Channel 40-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
40
rDS(on) (W)
0.010 @ VGS = 10 V
0.014 @ VGS = 4.5 V
ID (A)
70
58
TO-220AB
TO-263
DRAIN connected to TAB
GDS
Top View
SUP70N04-10
G DS
Top View
SUB70N04-10
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energya
Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 100_C
L = 0.1 mH
TC = 25_C
VDS
VGS
ID
IDM
IAR
EAR
PD
TJ, Tstg
40
"20
70
47
140
60
180
107b
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263)c
Free Air (TO-220)
Notes:
a. Duty cycle v 1%.
b. See SOA curve for voltage derating.
c. Surface mounted on 1” FR4 board.
Document Number: 70783
S-05110—Rev. D, 10-Dec-01
Symbol
RthJA
RthJC
Typical
35
45
1.2
Maximum
40
50
1.4
Unit
_C/W
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Vishay
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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