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CM100DU-24F fiches techniques PDF

Powerex Power Semiconductors - Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts

Numéro de référence CM100DU-24F
Description Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
Fabricant Powerex Power Semiconductors 
Logo Powerex Power Semiconductors 





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CM100DU-24F fiche technique
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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM100DU-24F
Trench Gate Design
Dual IGBTMOD™
100 Amperes/1200 Volts
P - NUTS (3 PLACES)
TC MEASURING
POINT
A
ND
C2E1
E2
C1
B
Q (2 PLACES)
E
F
H
F
G
MK
K
J
R
CL
C2E1
RTC
E2
RTC
G2
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D
3.15±0.01
80.0±0.25
E 0.43 11.0
F 0.16
4.0
G 0.71
18.0
H 0.02
0.5
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.53
0.91
1.13
0.67
0.28
M5
0.26 Dia.
0.16
Millimeters
13.5
23.0
28.7
17.0
7.0
M5
6.5 Dia.
4.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
UPS
Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100DU-24F is a
1200V (VCES), 100 Ampere Dual
IGBTMOD™ Power Module.
Current Rating
VCES
Type Amperes Volts (x 50)
CM 100
24
1

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