PDF 75N10 Data sheet ( Hoja de datos )

Número de pieza	75N10
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	nELL
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No Preview Available ! SEMICONDUCTOR 75N10 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (75A, 100Volts) DESCRIPTION The Nell 75N10 is a three-terminal silicon device with current conduction capability of 75A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 5 volts. They are designed as an extremely efficient and reliable device for use in a wide variety of applications. These transistors can be operated directly from integrated circuits. DD G D S TO-3PB (75N10A) GDS TO-220AB (75N10B) FEATURES RDS(ON) = 0.025Ω @ VGS = 10V Ultra low gate charge(74nC typical) Low reverse transfer capacitance (CRSS = 275pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D (Drain) G (Gate) S (Source) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (Ω) QG(nC) typical 75 75 100 0.025 @ VGS = 10V 74 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VALUE VDSS VDGR VGS ID IDM IAR EAR EAS Drain to Source voltage Drain to Gate voltage Gate to Source voltage Continuous Drain Current Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy(Note 3) TJ=25°C to 150°C RGS=1MΩ TC=25°C TC=100°C lAS=50A, L=0.8mH 100 100 ±20 75 50 200 50 30 1000 dv/dt PD TJ TSTG TL Peak diode recovery dv/dt(Note 4) Total power dissipation Linear derating factor above TC=25°C Operation junction temperature Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw TC=25°C 1.6mm from case 10 300 1.90 -55 to 150 -55 to 150 300 10 (1.1) Note: 1.Caluclated continuous current based on maximum allowable junction temperature. Package limitation current is 75A 2.Repetitive rating: pulse width limited by junction temperature. 3.L = 0.8mH, IAS ≤ 50A , RG = 25Ω,TJ ≤ 150°C. 4.ISD ≤ 50A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ = 150°C. UNIT V A mJ V /ns W °C/W ºC lbf.in (N.m) www.nellsemi.com Page 1 of 8 1 page SEMICONDUCTOR Fig.7 Typical transfer characteristics 120 105 90 75 60 45 30 15 0 5 TJ = 125°C 25°C -40°C 6 7 8 9 10 Gate-Source voltage, VGS(V) 11 Fig.9 Typical source to drain diode forward voltage 200 180 160 140 120 100 80 60 40 20 0 0.5 TJ = 125°C TJ = 25°C 0.7 0.9 1.1 1.3 1.5 Diode forward voltage, VSD(V) 1.7 75N10 Series RRooHHSS Nell High Power Products . Fig.8 Forward transconductance 40 36 32 28 24 20 16 12 8 4 0 0 -40°C 25°C TJ = 125°C 20 40 60 80 100 120 140 160 180 Drain current, lD(A) Fig.10 Gate charge characteristics 10 9 VDS=50V lD=37.5A 8 lG=10mA 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 Gate charge, QG (nC) Fig.11 Typical capacitance vs. drain-Source voltage 10000 f=1 MHZ Ciss 1000 Coss Crss Fig.12 Maximum safe operating area 1000 100 100 RDS(on) Limit 100µ2s5µs 1ms 10ms DC Tj=150°C TC=25°C Single Pulse 100 0 5 10 15 20 25 30 35 40 Drain-source voltage, VDS(V) 10 1 10 100 1000 Drain-source voltage, VDS(V) www.nellsemi.com Page 5 of 8 5 Page

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