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IRF121 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence IRF121
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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IRF121 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF121
DESCRIPTION
·Drain Current ID=8A@ TC=25
·Drain Source Voltage-
: VDSS= 60V(Min)
·Static Drain-Source On-Resistance
: RDS(on) =0.3Ω(Max)
·Nanosecond Switching Speeds
APPLICATIONS
·Switching power supplies
·Motor controls,Inverters and Choppers
·Audio amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
60
±20
V
V
Drain Current-continuous@ TC=258 A
Total Dissipation@TC=25
40 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
3.12
30
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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