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Kexin - MOS Field Effect Transistor

Numéro de référence K2111
Description MOS Field Effect Transistor
Fabricant Kexin 
Logo Kexin 





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K2111 fiche technique
SMD Type
MOS Field Effect Transistor
2SK2111
MOSFICET
Features
Low on-resistance
RDS(on)=0.6 MAX.@VGS=4.0V,ID=0.5A
High switching speed
SOT-89
4.50+0.1
-0.1
1.80+0.1
-0.1
12 3
0.48+0.1
-0.1
0.53+0.1
-0.1
Unit: mm
1.50+0.1
-0.1
0.44+0.1
-0.1
3.00+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation *
Channel temperature
Storage temperature
* 16 cm2X0.7mm,ceramic substrate used
Symbol
VDSS
VGSS
ID
Idp
PD
Tch
Tstg
Rating
60
20
1.0
2.0
2.0
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=60V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(th) VDS=10V,ID=1mA
Yfs VDS=10V,ID=0.5A
VGS=4.0V,ID=0.5A
RDS(on)
VGS=10V,ID=0.5A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=0.5A,VGS(on)=10V,RL=50 ,RG=10
,VDD=25V
tf
1 Gate
11.. SBoauserce
222.. DDCroralalienicntor
333.. GSEmaotuieitrtcere
Min Typ Max Unit
1.0 A
10 A
0.8 1.4 2.0 V
0.4 S
0.32 0.6
0.24 0.45
170 pF
87 pF
32 pF
2.8 ns
2.3 ns
55 ns
27 ns
Marking
Marking
NU
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