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Numéro de référence | IRFP250 | ||
Description | N-Channel Power MOSFET / Transistor | ||
Fabricant | Fairchild | ||
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1 Page
Data Sheet
January 2002
IRFP250
33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA9295.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP250
TO-247
IRFP250
NOTE: When ordering, use the entire part number.
Features
• 33A, 200V
• rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
©2002 Fairchild Semiconductor Corporation
IRFP250 Rev. B
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Pages | Pages 7 | ||
Télécharger | [ IRFP250 ] |
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