|
|
Datasheet FY8PF25N-D3-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
FY8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | FY8AAJ-03A | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FY8AAJ-03A
HIGH-SPEED SWITCHING USE
FY8AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN No-contact
q 4V DRIVE q VDSS ...................................................  Mitsubishi Electric Semiconductor data | | |
| 2 | FY8AAJ-03A | Nch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FY8AAJ-03A
HIGH-SPEED SWITCHING USE
FY8AAJ-03A
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN No-contact
q 4V DRIVE q VDSS ...................................................  Powerex Power Semiconductors mosfet | | |
| 3 | FY8AAJ-03F | High-Speed Switching Use Nch Power MOS FET FY8AAJ-03F
High-Speed Switching Use Nch Power MOS FET
REJ03G0280-0100 Rev.1.00 Aug.20.2004
Features
• Drive voltage : 4 V • VDSS : 30 V • rDS(ON) (max) : 28 mΩ • ID : 8 A
Outline
SOP-8
5,6,7,8
5 8 4 1
4
1,2,3. Source 4. Gate 5,6,7,8. Drain
1,2,3
Applications
Moto  Renesas Technology data | | |
| 4 | FY8ABJ-03 | HIGH-SPEED SWITCHING USE MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 4V DRIVE q VDSS ........................................................................ Mitsubishi Electric Semiconductor data | | |
| 5 | FY8ABJ-03 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE MITSUBISHI Pch POWER MOSFET
FY8ABJ-03
HIGH-SPEED SWITCHING USE
FY8ABJ-03
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 4V DRIVE q VDSS ........................................................................ Powerex Power Semiconductors mosfet | | |
| 6 | FY8ACH-02A | HIGH-SPEED SWITCHING USE MITSUBISHI Nch POWER MOSFET
FY8ACH-02A
HIGH-SPEED SWITCHING USE
FY8ACH-02A
OUTLINE DRAWING
Dimensions in mm
6.0 4.4
5.0
1.8 MAX.
0.4 1.27
SOURCE GATE DRAIN
q 2.5V DRIVE q VDSS .......................................................... Mitsubishi Electric Semiconductor data | | |
| 7 | FY8BCH-02F | Nch POWER MOSF PRELIMINARYNSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.
FY8BCH-02F
MITMSIUTBSIUSBHIISNHcI hNPchOWPOEWREMROMSFOESTFET
FY8BCFYH8B-0CH2-F02F
HIGHHIG-SHP-ESEPDEESDWSITWCIHTICNHGINUGSEUSE
OUTLINE DRAWING
Dimensions in mm
6.4 4.4
q 2.5V DRIVE q VDSS ..............  Mitsubishi data | |
| Esta página es del resultado de búsqueda del FY8PF25N-D3-PDF.HTML. Si pulsa el resultado de búsqueda de FY8PF25N-D3-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |