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PDF BGS5 Data sheet ( Hoja de datos )
| Número de pieza | BGS5 | |
| Descripción | 40-4000 MHz SILICON GERMANIUM Gain Block | |
| Fabricantes | BeRex | |
| Logotipo |  |
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BGS5
40-4000 MHz SILICON GERMANIUM Gain Block
Device Features
Single Fixed 3V supply
No Dropping Resistor Required
No matching circuit needed
Lead-free/Green/RoHS compliant SOT-363 package
Application: Driver Amplifier, Cellular, PCS, GSM,
UMTS, WCDMA, Wireless Data
Part Marking (X: Wafer number)
BS5XOUT GND
GND
GND
GND
IN
Pin Description
RF IN
3
RF OUT
6
GND 1,2,4,5
Product Description
BeRex’s BGS5 is a high SiGe HBT MMIC am-
plifier, internally matched to 50 Ohms with-
out the need for external components. De-
signed to run directly from a 3V supply. The
BGS5 is designed for high linearity 3V gain
block applications . It is packaged in a RoHS-
compliant with SOT-363 surface mount
package.
Applications
Driver Amplifier
Cellular, PCS, GSM, UMTS, WCDMA
Typical Performance1
Parameter
70 900
Gain 17.3 16.5
S11
S22
OIP32
-16 -17
-14 -15
32.5 31.5
P1dB
N.F
15.5 16.2
2.2 2.5
Frequency
1900 2140
15 14.6
-17 -19
-13 -14
28.5 28
15.4 15
2.7 2.8
2650
13.8
-40
-17
27
14.5
3
Unit
3500 MHz
13.3
-16.3
-16.9
dB
dB
dB
24.6 dBm
13.7 dBm
2.7 dB
1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.
2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.
Applications Circuit
Freq.
C1/C2
L1
(1608 Chip Ind.)
Application Circuit Values Example
70~900MHz 900MHz ~ 3GHz
2nF 100pF
1uH 56nH
3GHz ~ 4GHz
10pF
12nH
C3 C4 C5
+3V
Bandwidth
IC @ (Vc = 3V)
VC
dG/dT
RTH
Min. Typical Max. Unit
40
4000
MHz
46 52 58 mA
3.0 V
-0.001
dB/°C
130 °C/W
RFin
C1
L1
BGS5
Absolute Maximum Ratings
Parameter
C2 RFout Operating Case Temperature
Storage Temperature
Junction Temperature
Rating
-40 to +85
-55 to +155
150
Unit
°C
°C
°C
*C1, C2, C3 =100 pF ± 5%; C4 = 1000 pF ± 5%; C5 = 10uF; **L1 = 56nH Operating Voltage
+3.5 V
**less than 56nH improves RF performance at over 0.5GHz.
Supply Current
110 mA
*820nH or higher value L1 improves RF performance at under 500MHz. Input RF Power
15 dBm
*Optimum value of L1 may vary with board design.
Operation of this device above any of these parameters may result in permanent damage.
*C1,C2=2000pF, L1=820nH for 50MHz application.
*C1,C2=10pF, L1=12nH for 3.5GHz application.
BeRex
●website: www.berex.com
●email: [email protected]
1
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2015 BeRex
Rev. D
1 page  
BGS5
40-4000 MHz SILICON GERMANIUM Gain Block
Typical Performance (Vd = 3.1V, Ic = 57mA, T = 25°C)
Freq MHz
40
50
70
900
1900
2140
2450
2650
S21 dB 19.1 18.7 18.3 16.9 15.2 14.8 14.3 14
S11 dB
11 12.8 15.5 19.6 19 21.8 30 28.8
S22 dB
20 20.4 20.5 16.8 15 15.6 16.6 17.2
P1 dBm 15.6 15.6 16 16.5 16 15.4 15.2 15.6
OIP3
dBm
33.6
33.8
33.6
32
29.8 29.1 28.3 28.2
NF dB 2.15 2.12 2.26 2.47 2.7 2.76 2.82 2.93
Typical Performance (Vd = 3.2V, Ic = 61mA, T = 25°C)
Freq MHz
40
50
70
900
1900
2140
2450
2650
S21 dB 19.1 18.7 18.3 17 15.2 14.8 14.4 14
S11 dB
11 12.8 15.4 19.3 18.9 21.6 30.1 29.7
S22 dB 20.1 20.3 20.2 16.7 15.1 15.7 16.8 17.4
P1 dBm 16.1 16.1 16.5 17.1 16.6 15.9 15.7 16
OIP3 dBm 34.5 34.2 33.8 32.5 30.3 29.5 28.7 28.5
NF dB 2.2 2.2 2.3 2.5 2.7 2.8 2.9 3.0
Typical Performance (Vd = 3.3V, Ic = 66mA, T = 25°C)
Freq MHz
40
50
70
900
1900
2140
2450
2650
S21 dB 19.1 18.8 18.3 17 15.3 14.9 14.4 14
S11 dB
11 12.8 15.4 19.1 18.7 21.5 30 30.4
S22 dB 20 20 20 16.6 15.2 15.8 17 17.5
P1 dBm 16.5 16.5 17 17.7 17.1 16.3 16.1 16.4
OIP3 dBm 34.7 34.7 34.1 32.7 30.5 29.8 28.9 28.6
NF dB 2.2 2.2 2.3 2.5 2.8 2.8 2.9 3
BeRex
●website: www.berex.com
●email: [email protected]
Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.
All other trademarks are the property of their respective owners. © 2015 BeRex
5
Rev. D
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BGS5.PDF ] | |
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