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PDF S9015LT1 Data sheet ( Hoja de datos )
| Número de pieza | S9015LT1 | |
| Descripción | PNP Epitaxial Silicon Transistor | |
| Fabricantes | Elite | |
| Logotipo |  |
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S9015LT1
PNP Epitaxial Silicon Transistor
LOW FREQUENCY, LOW NOISE AMPLIFIER
SOT-23
Collector-Emitter Voltage: VCEO= -45V
Collector Dissipation: PC=200mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
-50
-45
-5
-100
200
150
-55~+150
V
V
V
mA
mW
oC
oC
Tolerance : 0.1mm
Dimensions (Unit : mm)
1. Emitter 2. Base 3. Collector
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Min Max Unit
Collector-Base Breakdown Voltage
BVCBO IC= -100µA, IE= 0
-50
V
Collector-Emitter Breakdown Voltage
BVCEO IC= -1mA, IB= 0
-45
V
Emitter-Base Breakdown Voltage
BVEBO IE= -100µA, IC= 0
-5 -0.05 V
Collector Cut-off Current
ICBO VCB= -50V, IE= 0
-0.05
µA
Emitter Cut-off Current
IEBO VEB= -5V, IC= 0
1000
µA
DC Current Gain
hFE VCE= -5V, IC= -1mA
200 -0.3
Collector-Emitter Saturation Voltage
VCE(sat) IC= -100mA, IB= -10mA
-1 V
Base-Emitter Saturation Voltage
VBE(sat) IC= -100mA, IB= -10mA
V
Transition Frequency
fT VCE= -5V, IC= -10mA
f= 30MHz 150 MHz
hFE CLASSIFICATION
Classification
hFE
L
200– 450
Device Marking
S9015LT1=M6
H
450 – 1000
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No. : S9015LT1
Page: 1 / 1
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| PDF Descargar | [ Datasheet S9015LT1.PDF ] | |
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