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PDF S9014LT1 Data sheet ( Hoja de datos )
| Número de pieza | S9014LT1 | |
| Descripción | NPN Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SOT-23 Plastic-Encapsulate Transistors
S9014LT1 TRANSISTOR NPN
FEATURES
High total power dissipation.(pc=0.2w)
Complementary to S9015LT1
MARKING: L6 J6
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current -Continuous
PC Collector Dissipation
TJ, Tstg
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS Tamb=25
Value
50
45
5
0.1
0.2
-55-150
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
Units
V
V
V
A
W
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100 A IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 0.1mA IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100 A IC=0
5
V
Collector cut-off current
ICBO
VCB=50 V , IE=0
0.1 A
Collector cut-off current
ICEO
VCE=35V , IB=0
0.1 A
Emitter cut-off current
IEBO
VEB= 3V , IC=0
0.1 A
DC current gain
hFE VCE=5V, IC= 1mA 200
1000
Collector-emitter saturation voltage
VCE(sat) IC=100 mA, IB= 5mA
0.3 V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
VBE(sat)
fT
IC=100 mA, IB= 5mA
VCE=5V, IC= 10mA
f=30MHz
C
200-400
1
150
D
400-1000
V
MHz
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet S9014LT1.PDF ] | |
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