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IXYS - Power MOSFETs

Numéro de référence 30N50Q
Description Power MOSFETs
Fabricant IXYS 
Logo IXYS 





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30N50Q fiche technique
HiPerFETTM Power MOSFETs
ISOPLUS247TM
IXFR 30N50Q
(Electrically Isolated Back Surface) IXFR 32N50Q
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
VDSS
ID25
500 V 29 A
500 V 30 A
trr £ 250 ns
RDS(on)
0.16 W
0.15 W
Preliminary data
Symbol
VDSS
VDGR
VGS
VGSM
ID25
I
DM
I
AR
EAS
EAR
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
Continuous
Transient
500
500
±20
±30
TC = 25°C
T
C
=
25°C,
Pulse
width
limited
by
T
JM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
TC = 25°C
30N50
32N50
30N50
32N50
30N50
32N50
30
120
30
1.5
45
5
310
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
50/60 Hz, RMS t = 1 minute leads-to-tab
2500
6
V
V
V
V
A
A
A
J
mJ
V/ns
W
°C
°C
°C
°C
V~
g
ISOPLUS 247TM
E 153432
G
D
Isolated back surface*
G = Gate
S = Source
D = Drain
* Patent pending
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS
V
GS(th)
IGSS
IDSS
RDS(on)
VGS = 0 V, ID = 1mA
V = V , I = 4mA
DS GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
VGS = 10 V, ID = IT
Notes 1, 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
500 V
2 4V
±100 nA
TJ = 25°C
TJ = 125°C
30N50
32N50
100 mA
1 mA
0.16 W
0.15 W
Applications
DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98608B (7/00)
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