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PDF 30N45 Data sheet ( Hoja de datos )
| Número de pieza | 30N45 | |
| Descripción | N-Channel Enhancement Mode MFET | |
| Fabricantes | IXYS | |
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Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V
IXTH 30N50 500 V
ID25
RDS(on)
30 A 0.16 Ω
30 A 0.17 Ω
TO-247 AD
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
PD
TJ
TJM
T
stg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
30N45
30N50
30N45
30N50
450
500
450
500
±20
±30
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
30
120
360
-55 ... +150
150
-55 ... +150
V
V
V
V
V
V
A
A
W
°C
°C
°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
300 °C
1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 5 mA
30N50
30N45
BV temperature coefficient
DSS
VDS = VGS, ID = 250µA
V temperature coefficient
GS(th)
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 0.5 I
GS D D25
30N50
30N45
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500
450
.087
2
-0.25
V
V
%/k
4V
%/k
±100 nA
200 µA
3 mA
0.17
0.16
Ω
Ω
TO-247 SMD
( ...S )
D (TAB)
G
E
C (TAB)
G = Gate,
D = Drain,
S = Source, TAB = Drain
*Add suffix letter "S" for TO-247 SMD
package option (EX:IXTH30N50S)
Features
• International standard package
JEDEC TO-247 AD
•
Low
R
DS (on)
HDMOSTM
process
• Rugged polysilicon gate cell structure
• High commutating dv/dt rating
• Fast switching times
Applications
• Switch-mode and resonant-mode
power supplies
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC choppers
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
© 1997 IXYS All rights reserved
94569D(5/97)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 30N45.PDF ] | |
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