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Tuofeng Semiconductor - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence 4407
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





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4407 fiche technique
Shenzhen Tuofeng Semiconductor Technology co., LTD
4407
P-Channel Enhancement-Mode MOSFET (-30V, -12A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
13 @ VGS = -20V ,ID=-10A
-30V -12A
20 @ VGS = -10V ,ID=-10A
28 @ VGS = -5V ,ID=-10A
Features
· Advanced Trench Process Technology
· High Density Cell Design for Ultra Low On-Resistance
· Lead free product is acquired
·
SOP-8
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Symbol
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current @TA=25oC
Parameter
IDM Drain Current (Pulsed) a
IAR Avalanche Current
EAR Repetitive Avalanche Energy L=0.3mH
Total Power Dissipation @TA=25oC
PD Total Power Dissipation @TA=75oC
IS Maximum Diode Forward Current
Tj, Tstg
RqJA
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)b
a: Repetitive Rating: Pulse width limited by the maximum junction temperation.
b: 1-in2 2oz Cu PCB board
Pin 1 / 2 / 3: Source
Pin 4: Gate
Pin 5 / 6 / 7 / 8: Drain
Ratings
-30
±20
-10
-60
30
135
3
2.1
-2.1
-55 to +150
50
Units
V
V
A
A
A
mJ
W
A
°C
°C/W
1

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