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Numéro de référence | AO3401 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Tuofeng Semiconductor | ||
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1 Page
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3401
AO3401
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3401 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. Standard product AO3401 is Pb-free
(meets ROHS & Sony 259 specifications). AO3401
is a Green Product ordering option.
Features
VDS (V) = -30V
ID = -4.0 A (VGS = -10V)
RDS(ON) < 60mΩ (VGS = -10V)
RDS(ON) < 70mΩ (VGS = -4.5V)
RDS(ON) < 100mΩ (VGS = -2.5V)
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±12
-4.0
-3.5
-30
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
65
85
43
Max
90
125
60
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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Pages | Pages 4 | ||
Télécharger | [ AO3401 ] |
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