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Numéro de référence | AO3409 | ||
Description | P-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Tuofeng Semiconductor | ||
Logo | |||
1 Page
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3409
AO3409
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3409 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO3409 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
VDS (V) = -30V
ID = -2.6 A (VGS = -10V)
RDS(ON) < 130mΩ (VGS = -10V)
RDS(ON) < 200mΩ (VGS = -4.5V)
(SOT-23)
Top View
G
D
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±20
-2.6
-2.2
-20
1.4
1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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Pages | Pages 4 | ||
Télécharger | [ AO3409 ] |
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