|
|
Datasheet AO3410-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
AO3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | AO331 | AND / OR circuit providing the logical function Q
R
Austria Mikro Systeme International
AO331
CUB
0.6 µm CMOS
AO331 is an AND / OR circuit providing the logical function Q = (A.B.C+D.E.F+G). Truth Table
A L L L X X X X X X X X H B X X X L L L X X X X X H C X X X X X X L L L X X H D L X X L X X L X X X H X E X L X X L X X L  AMS data | | |
| 2 | AO3400 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3400
AO3400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable  Tuofeng Semiconductor transistor | | |
| 3 | AO3400 | N-CHANNEL MOSFET AO3400
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) < 28mΩ (VGS = 10V) RDS(ON) < 33mΩ (VGS = 4.5V) RDS(ON) < 52mΩ (VGS = 2.5V)
用�  BLUE ROCKET ELECTRONICS mosfet | | |
| 4 | AO3400 | N-Channel Enhancement Mode Field Effect Transistor SMD Type
MOSFIECT
N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400)
Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
Absolut  Kexin transistor | | |
| 5 | AO3400 | N-Channel MOSFET Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited  HOTTECH mosfet | | |
| 6 | AO3400 | 30V N-Channel Enhancement Mode MOSFET 30V N-Channel Enhancement Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, [email protected] < 28mΩ RDS(ON), [email protected], [email protected] < 33mΩ RDS(ON), [email protected], [email protected] < 52mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
AO3400
D
SOT-23-3L
GS
 JinYu mosfet | | |
| 7 | AO3400 | N-Channel Enhancement Mode Field Effect Transistor
AO3400 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM appl  Alpha & Omega Semiconductors transistor | |
| Esta página es del resultado de búsqueda del AO3410-PDF.HTML. Si pulsa el resultado de búsqueda de AO3410-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |