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Tuofeng Semiconductor - 20V Complementary MOSFET

Numéro de référence 6604
Description 20V Complementary MOSFET
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





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6604 fiche technique
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
6604
20V Complementary MOSFET
Product Summary
N-Channel
VDS= 20V
ID= 3.4A (VGS=4.5V)
RDS(ON)
< 65m(VGS=4.5V)
< 75m(VGS=2.5V)
< 100m(VGS=1.8V)
P-Channel
-20V
-2.5A (VGS=-4.5V)
RDS(ON)
< 75m(VGS=-4.5V)
< 105m(VGS =-2.5V)
< 180m(VGS=-1.8V)
Top View
D1 D2
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
G1 G2
S1 S2
n-channel
p-channel
Absolute Maximum Ratings T =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Max n-channel
20
±8
Continuous Drain
Current
TA=25°C
Pulsed Drain Current C
ID 3.4
IDM 13
Max p-channel
-20
±8
-2.5
-13
Power Dissipation B TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
1.1 1.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
78
106
64
Max
110
150
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
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