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Seme LAB - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence 2N6660
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Seme LAB 
Logo Seme LAB 





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2N6660 fiche technique
N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
2N6660
VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0
Fast Switching
Low Threshold Voltage (Logic Level)
Low CISS
Integral Source-Drain Body Diode
Hermetic Metal TO39 Package
High Reliability Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage
60V
VGS Gate – Source Voltage
±20V
ID
Continuous Drain Current
TC = 25°C
1.0A
IDM Pulsed Drain Current (1)
3.0A
PD
Total Power Dissipation at
TC 25°C
5W
De-rate TC > 25°C
40mW/°C
PD
Total Power Dissipation at
TA 25°C
725mW
De-rate TA > 25°C
5.8mW/°C
TJ Operating Temperature Range
-65 to +150°C
Tstg Storage Temperature Range
-65 to +150°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
RθJA
Thermal Resistance, Junction To Ambient
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) Pulse Width 300us, δ ≤ 2%
Min.
Typ.
Max. Units
25 °C/W
172 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected]
Document Number 8263
Website: http://www.semelab-tt.com
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