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PDF MTB020N03KJ3 Data sheet ( Hoja de datos )
| Número de pieza | MTB020N03KJ3 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MTB020N03KJ3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
MTB020N03KJ3
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
VGS=10V, ID=20A
RDSON(TYP) VGS=4.5V, ID=10A
Features
VGS=4V, ID=10A
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free lead plating and halogen-free package
30V
30A
9A
13mΩ
18mΩ
21mΩ
Equivalent Circuit
MTB020N03KJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
Shipping
MTB020N03KJ3-0-T3-G
TO-252
(Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N03KJ3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C143J3
Issued Date : 2015.12.15
Revised Date : 2016.02.22
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 Coss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
Crss
10
0
10
5 10 15 20 25
VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
VDS=10V
1
VDS=15V
0.6 ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01 0.1
1
ID, Drain Current(A)
10
Maximum Safe Operating Area
1000
RDSON
100 Limited
10
1 TC=25°C, Tj=150°C
VGS=10V, RθJC=2.5°C/W
Single Pulse
0.1
0.1
1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100m
s1s
DC
100
4
VDS=15V
2 ID=20A
0
0 2 4 6 8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
35
30
25
20
15
10
5 VGS=10V, RθJC=2.5°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB020N03KJ3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB020N03KJ3.PDF ] | |
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