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Numéro de référence | MTB050P10E3 | ||
Description | P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | Cystech Electonics | ||
Logo | |||
CYStech Electronics Corp.
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB050P10E3
BVDSS
ID @ VGS=-10V
RDSON(TYP) @ VGS=-10V, ID=-20A
RDSON(TYP) @ VGS=-4.5V, ID=-15A
-100V
-40A
46mΩ
52mΩ
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTB050P10E3
Outline
TO-220
G:Gate
D:Drain
S:Source
GDS
Ordering Information
Device
MTB050P10E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB050P10E3
CYStek Product Specification
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Pages | Pages 8 | ||
Télécharger | [ MTB050P10E3 ] |
No | Description détaillée | Fabricant |
MTB050P10E3 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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