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MTB050P10E3 fiches techniques PDF

Cystech Electonics - P-Channel Enhancement Mode Power MOSFET

Numéro de référence MTB050P10E3
Description P-Channel Enhancement Mode Power MOSFET
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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MTB050P10E3 fiche technique
CYStech Electronics Corp.
Spec. No. : C975E3
Issued Date : 2014.07.10
Revised Date :
Page No. : 1/8
P-Channel Enhancement Mode Power MOSFET
MTB050P10E3
BVDSS
ID @ VGS=-10V
RDSON(TYP) @ VGS=-10V, ID=-20A
RDSON(TYP) @ VGS=-4.5V, ID=-15A
-100V
-40A
46mΩ
52mΩ
Features
Low Gate Charge
Simple Drive Requirement
Repetitive Avalanche Rated
Fast Switching Characteristic
RoHS compliant package
Symbol
MTB050P10E3
Outline
TO-220
GGate
DDrain
SSource
GDS
Ordering Information
Device
MTB050P10E3-0-UB-S
Package
TO-220
(Pb-free lead plating package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB050P10E3
CYStek Product Specification

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