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PDF MTB050P10J3 Data sheet ( Hoja de datos )
| Número de pieza | MTB050P10J3 | |
| Descripción | P-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | Cystech Electonics | |
| Logotipo |  |
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CYStech Electronics Corp.
Spec. No. : C975J3
Issued Date : 2015.03.17
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB050P10J3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TC=100°C
ID@VGS=-10V, TA=25°C
ID@VGS=-10V, TA=70°C
RDS(ON)@VGS=-10V, ID=-15A
Features
RDS(ON)@VGS=-4.5V, ID=-12A
• Single Drive Requirement
• Low On-resistance
• Fast switching Characteristic
• Pb-free lead plating and halogen-free package
-100V
-24A
-17A
-4.1A
-3.3A
45 mΩ(typ)
51 mΩ(typ)
Symbol
MTB050P10J3
Outline
TO-252(DPAK)
G：Gate
D：Drain
S：Source
G DS
Ordering Information
Device
MTB050P10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050P10J3
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C975J3
Issued Date : 2015.03.17
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
100
10
0
f=1MHz
Crss
10 20
-VDS, Drain-Source Voltage(V)
30
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
VDS=-5V
Pulsed
Ta=25°C
0.01 0.1 1 10
-ID, Drain Current(A)
100
1.2
ID=-1mA
1
0.8
0.6 ID=-250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=-50V
8
VDS=-20V
6
4 VDS=-80V
2
ID=-15A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
100μ s
RDS(ON)
Limited
10
1ms
10ms
100ms
1
TC=25°C, Tj=175°C,
VGS=-10V, RθJC=2°C/W,
single pulse
1s
DC
0.1
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
30
25
20
15
10
5 VGS=-10V, Tj(max)=175°C,
RθJC=2°C/W, single pulse
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB050P10J3
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB050P10J3.PDF ] | |
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