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Número de pieza | MTB080P06J3 | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB080P06J3 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 1/ 9
P-Channel Enhancement Mode Power MOSFET
MTB080P06J3 BVDSS
ID@VGS=-10V, TC=25°C
RDS(ON)@VGS=-10V, ID=-10A
RDS(ON)@VGS=-5V, ID=-8A
-60V
-12.5A
82.5mΩ(typ)
107mΩ(typ)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free Lead Plating & Halogen-free Package
Equivalent Circuit
MTB080P06J3
Outline
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G DS
Ordering Information
Device
MTB080P06J3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB080P06J3
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C069J3
Issued Date : 2016.03.16
Revised Date :
Page No. : 5/ 9
Typical Characteristics (Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
f=1MHz
10
0
Crss
10 20
-VDS, Drain-Source Voltage(V)
30
Maximum Safe Operating Area
100
RDS(ON)
Limited
10
100μs
1ms
10ms
100ms
1
TC=25°C, Tj=150°C,
VGS=-10V, RθJC=4°C/W,
single pulse
1s
DC
0.1
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
16
14
12
10
8
6
4
VGS=-10V, Tj(max)=150°C,
2 RθJC=4°C/W, single pulse
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1.0
0.8
0.6
ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
4
2 VDS=-48V
ID=-10A
0
0 3 6 9 12 15
Qg, Total Gate Charge(nC)
20
18
16
14
12
10
8
6
4
2
0
0
Typical Transfer Characteristics
VDS=-10V
12 34 56 78
-VGS, Gate-Source Voltage(V)
9 10
MTB080P06J3
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB080P06J3.PDF ] |
Número de pieza | Descripción | Fabricantes |
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