|
|
Número de pieza | MTB080P06Q8 | |
Descripción | P-Channel Enhancement Mode Power MOSFET | |
Fabricantes | Cystech Electonics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MTB080P06Q8 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06Q8 BVDSS
ID@ VGS=-10V, TA=25°C
RDSON @VGS=-10V, ID=-4A
RDSON @VGS=-4.5V, ID=-3A
-60V
-4A
80.3mΩ(typ.)
108mΩ(typ.)
Features
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating package
Equivalent Circuit
MTB080P06Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
Ordering Information
Device
MTB080P06Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB080P06Q8
CYStek Product Specification
1 page CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
10
0
Crss
5 10 15 20 25
-VDS, Drain-Source Voltage(V)
30
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
1 ID=-1mA
0.8
0.6 ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
TA=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
Maximum Safe Operating Area
100
100μs
10
1ms
10ms
1
100ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
1s
DC
0.01
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-30V
6 VDS=-12V
4 VDS=-48V
2
ID=-4A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TA=25°C, VGS=-10V, RθJA=40°C/W
0.5
0.0
25
50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB080P06Q8
CYStek Product Specification
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet MTB080P06Q8.PDF ] |
Número de pieza | Descripción | Fabricantes |
MTB080P06Q8 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |