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PDF MTB080P06Q8 Data sheet ( Hoja de datos )

Número de pieza MTB080P06Q8
Descripción P-Channel Enhancement Mode Power MOSFET
Fabricantes Cystech Electonics 
Logotipo Cystech Electonics Logotipo



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No Preview Available ! MTB080P06Q8 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB080P06Q8 BVDSS
ID@ VGS=-10V, TA=25°C
RDSON @VGS=-10V, ID=-4A
RDSON @VGS=-4.5V, ID=-3A
-60V
-4A
80.3mΩ(typ.)
108mΩ(typ.)
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating package
Equivalent Circuit
MTB080P06Q8
Outline
SOP-8
GGate
SSource
DDrain
Ordering Information
Device
MTB080P06Q8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB080P06Q8
CYStek Product Specification

1 page




MTB080P06Q8 pdf
CYStech Electronics Corp.
Spec. No. : C069Q8
Issued Date : 2016.01.29
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100 C oss
10
0
Crss
5 10 15 20 25
-VDS, Drain-Source Voltage(V)
30
Normalized Threshold Voltage vs Junction
Tempearture
1.6
1.4
1.2
1 ID=-1mA
0.8
0.6 ID=-250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
TA=25°C
0.01 0.1
1
-ID, Drain Current(A)
10
Maximum Safe Operating Area
100
100μs
10
1ms
10ms
1
100ms
0.1
TA=25°C, Tj=150°C, VGS=-10V
RθJA=40°C/W, Single Pulse
1s
DC
0.01
0.1
1 10 100
-VDS, Drain-Source Voltage(V)
1000
8
VDS=-30V
6 VDS=-12V
4 VDS=-48V
2
ID=-4A
0
0 2 4 6 8 10 12
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TA=25°C, VGS=-10V, RθJA=40°C/W
0.5
0.0
25
50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB080P06Q8
CYStek Product Specification

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