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MTB110P08KJ3 fiches techniques PDF

Cystech Electonics - P-Channel Enhancement Mode Power MOSFET

Numéro de référence MTB110P08KJ3
Description P-Channel Enhancement Mode Power MOSFET
Fabricant Cystech Electonics 
Logo Cystech Electonics 





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MTB110P08KJ3 fiche technique
CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
Low Gate Charge
Simple Drive Requirement
ESD Protected Gate
Pb-free Lead Plating & Halogen-free Package
-80V
-11.3A
-3.2A
103mΩ(typ)
141mΩ(typ)
Equivalent Circuit
MTB110P08KJ3
Outline
TO-252(DPAK)
GGate
DDrain
SSource
G DS
Ordering Information
Device
MTB110P08KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P08KJ3
CYStek Product Specification

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