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Numéro de référence | MTB110P08KJ3 | ||
Description | P-Channel Enhancement Mode Power MOSFET | ||
Fabricant | Cystech Electonics | ||
Logo | |||
CYStech Electronics Corp.
Spec. No. : C123J3
Issued Date : 2016.07.20
Revised Date :
Page No. : 1/9
P-Channel Enhancement Mode Power MOSFET
MTB110P08KJ3 BVDSS
ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-5A
RDS(ON)@VGS=-4.5V, ID=-3A
Features
• Low Gate Charge
• Simple Drive Requirement
• ESD Protected Gate
• Pb-free Lead Plating & Halogen-free Package
-80V
-11.3A
-3.2A
103mΩ(typ)
141mΩ(typ)
Equivalent Circuit
MTB110P08KJ3
Outline
TO-252(DPAK)
G:Gate
D:Drain
S:Source
G DS
Ordering Information
Device
MTB110P08KJ3-0-T3-G
Package
TO-252
(Pb-free lead plating & halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB110P08KJ3
CYStek Product Specification
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Pages | Pages 9 | ||
Télécharger | [ MTB110P08KJ3 ] |
No | Description détaillée | Fabricant |
MTB110P08KJ3 | P-Channel Enhancement Mode Power MOSFET | Cystech Electonics |
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