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PDF BFR91G Data sheet ( Hoja de datos )

Número de pieza BFR91G
Descripción RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Fabricantes Advanced Power Technology 
Logotipo Advanced Power Technology Logotipo



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No Preview Available ! BFR91G Hoja de datos, Descripción, Manual

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR91
BFR91G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Storage Temperature
RθJA
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Value
12
15
3.0
35
180
2.0
-65 to +150
500
Unit
Vdc
Vdc
Vdc
mA
mWatts
mW/ ºC
ºC
ºC/W
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005

1 page




BFR91G pdf
BFR91
BFR91G
PIN 1. COLLECTOR
2. EMITTER
3. BASE
1.
2.
3.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Rev A 9/2005

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