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Stanson Technology - Dual P Channel Enhancement Mode MOSFET

Numéro de référence STP1013
Description Dual P Channel Enhancement Mode MOSFET
Fabricant Stanson Technology 
Logo Stanson Technology 





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STP1013 fiche technique
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
DESCRIPTION
STP1013 is the P-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
SOT-523 / SC-89
FEATURE
-20V/-0.45A, RDS(ON) =520ohm
@VGS =-4.5V
-20V/-0.35A, RDS(ON) =700ohm
@VGS =-2.5V
-20V/-0.25A, RDS(ON) =950ohm
@VGS =-1.8V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-523 / SC89 package design
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1

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