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Numéro de référence | STP1013 | ||
Description | Dual P Channel Enhancement Mode MOSFET | ||
Fabricant | Stanson Technology | ||
Logo | |||
STP1013
Dual P Channel Enhancement Mode MOSFET
-0.45A
DESCRIPTION
STP1013 is the P-Channel enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology. This high density process is
especially tailored to minimize on-state resistance and provide superior switching
performance. These devices are particularly suited for low voltage applications such as
notebook computer power management and other bettery powered circuits where
high-side switching, low in-line power loss, and resistance to transients are needed.
PIN CONFIGURATION
SOT-523 / SC-89
FEATURE
-20V/-0.45A, RDS(ON) =520ohm
@VGS =-4.5V
-20V/-0.35A, RDS(ON) =700ohm
@VGS =-2.5V
-20V/-0.25A, RDS(ON) =950ohm
@VGS =-1.8V
Super high density cell design for extremely
low RDS(ON)
Exceptional low on-resistance and maximum
DC current capability
SOT-523 / SC89 package design
PART MARKING
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STP1013 2009. V1
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Pages | Pages 7 | ||
Télécharger | [ STP1013 ] |
No | Description détaillée | Fabricant |
STP1012 | 32-Bit Microprocessor | Sun Microsystems |
STP1013 | Dual P Channel Enhancement Mode MOSFET | Stanson Technology |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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