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شماره قطعه | AP70T03GJ-HF | ||
شرح مفصل | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
تولید کننده | Advanced Power Electronics | ||
آرم | ![]() |
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![]() Advanced Power
Electronics Corp.
AP70T03GH/J-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching
▼ RoHS Compliant
G
D
S
Description
AP70T03 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and suited for
high current application due to the low connection resistance. The
through-hole version (AP70T03GJ) are available for low-profile
applications.
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
GD
S
TO-252(H)
GD
S
TO-251(J)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
30 V
+20 V
60 A
43 A
195 A
53 W
0.36 W/℃
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
2.8
62.5
110
Units
℃/W
℃/W
℃/W
1
201408266
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قانون اساسی | صفحه 5 | ||
دانلود | [ AP70T03GJ-HF دیتاشیت ] |
شماره قطعه | شرح مفصل | تولید کنندگان |
AP70T03GJ-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ![]() Advanced Power Electronics |
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www.DataSheetWiki.com | 2020 | تماس با ما | جستجو |