10EDB60 Datasheet دیتاشیت PDF دانلود

دیتاشیت - SUNMATE - AXIAL LEADED SILICON RECTIFIER DIODES

شماره قطعه	10EDB60
شرح مفصل	AXIAL LEADED SILICON RECTIFIER DIODES
تولید کننده	SUNMATE
آرم
1 Page No Preview Available ! 10EDB60 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 600V CURRENT: 1.0 A Features ! Miniature Size ! Low Forward Voltage drop ! Low Reverse Leakage Current ! High Surge Capability Mechanical Data ! Case: D O - 4 1 ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.35 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ABA D DO-41 Dim Min Max A 25.40 ¾ B 4.06 5.21 C 0.71 0.864 D 2.00 2.72 All Dimensions in mm C Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Repetitive Peak Reverse Voltage Average Rectified Output Current 50Hz Half Sine Wave Resistive Load Ta=39 °C *1 Ta=26 °C *2 RMS Forward Current Surge Forward Current 50Hz Half Sine Wave,1cycle, Non-repetitive Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) I FSM T jw T stg 10EDB60 600 1.0 0.9 1.57 45 - 40 to + 150 - 40 to + 150 Unit V A A A °C °C Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol Conditions I RM VFM Rth(j-a) Tj= 25 ° C, VRM= VRRM Tj= 25 °C, IFM = 1.0A Junction to P.C. Board mounted*1 Ambient Without Fin *2 *1: P.C. Board mounted (L=3mm, Print Land=5 x 5mm, Both Sides) *2: Without Fin or P.C. Board mounted Min. Typ. Max. Unit - - 10 µA - - 1.0 V - - - - 110 140 °C/W 1 of 2 www.sunmate.tw
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دیتاشیت توصیه

شماره قطعه	شرح مفصل	تولید کنندگان
10EDB60	DIODE - 1A 600V TJ = 150C	Nihon Inter Electronics
10EDB60	GLASS PASSIVATED RECTIFIER VOLTAGE: 600V CURRENT: 1.0A	Gulf Semiconductor
10EDB60	AXIAL LEADED SILICON RECTIFIER DIODES	SUNMATE

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