1S1829 Datasheet دیتاشیت PDF دانلود

دیتاشیت - SUNMATE - AXIAL LEADED SILICON RECTIFIER DIODES

شماره قطعه	1S1829
شرح مفصل	AXIAL LEADED SILICON RECTIFIER DIODES
تولید کننده	SUNMATE
آرم
1 Page No Preview Available ! 1S1829 AXIAL LEADED SILICON RECTIFIER DIODES VOLTAGE RANGE: 400V CURRENT: 1.0 A Features ! Diffused Junction ! Low Forward Voltage Drop ! High Current Capability ! High Reliability ! High Surge Current Capability Mechanical Data ! Case: D O - 1 5 ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.40 grams (approx.) ! Mounting Position: Any ! Marking: Type Number ABA D DO-15 Dim Min Max A 25.40 — B 5.50 7.62 C 0.686 0.889 D 2.60 3.60 All Dimensions in mm C Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Maximum Recurrent Peak Reverse Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 50 °C Peak Forward Surge Current, 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage at IF = 1.5 Amps. Repetitive Peak Reverse Current Tj = 150 °C Storage Temperature Range Junction Temperature Range Thermal Resistance (Junction to Ambient) DC Symbol VRRM IF(AV) IFSM VF IRRM(1) IRRM(2) Tstg TJ Rth(j-a) 1S1829 400 1.0 45 1.2 10 400 - 40 to + 150 - 40 to + 150 100 Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Unit V A A V µA µA C °C °C/W 1 of 2 www.sunmate.tw
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دیتاشیت توصیه

شماره قطعه	شرح مفصل	تولید کنندگان
1S1829	Silicon Diffused Type Rectifier	Toshiba Semiconductor
1S1829	AXIAL LEADED SILICON RECTIFIER DIODES	SUNMATE

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