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DN2625K4-G fiches techniques PDF

Supertex - N-Channel Depletion-Mode Vertical DMOS FET

Numéro de référence DN2625K4-G
Description N-Channel Depletion-Mode Vertical DMOS FET
Fabricant Supertex 
Logo Supertex 





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DN2625K4-G fiche technique
Supertex inc.
DN2625
N-Channel Depletion-Mode Vertical DMOS
FET in Single and Dual Options
Features
Very low gate threshold voltage
Designed to be source-driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Well matched for low second harmonic when
driven by Supertex MD2130
Applications
Medical ultrasound beamforming
Ultrasonic array focusing transmitter
Piezoelectric transducer waveform drivers
High speed arbitrary waveform generator
Normally-on switches
Solid state relays
Constant current sources
Power supply circuits
General Description
The Supertex DN2625 is a low threshold depletion-mode (normally-
on) transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process. This
combination produces a device with the power handling capabilities
of bipolar transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic of
all MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad
DFN package. The DN2625K6-G in the 14-lead QFN package is not
recommended for new designs, but may continue to be purchased
for existing designs.
Ordering Information
Part Number
Package Option Packing
DN2625K4-G
TO-252 D-PAK 1000/Bag
DN2625DK6-G
8-Lead DFN
490/Tray
DN2625DK6-G M932 8-Lead DFN
2500/Reel
DN2625K6-G*
14-Lead QFN
490/Tray
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
* This package obsolete. For single MOSFETs use the TO-252 D-PAK (K4), for dual
MOSFETs use the 8-Lead DFN (K6) (dual pad).
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
250V
Drain-to-gate voltage
250V
Gate-to-source voltage
±20V
Operating and storage temperature
-55OC to +150OC
Soldering temperature*
300OC
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Product Summary
BVDSX/BVDGX
VGS(OFF)
(max)
250V
-2.1V
Pin Configuration
DRAIN
IDS (pulsed)
(VGS = 0.9V)
(min)
3.3A
SOURCE
GATE
TO-252 D-PAK
S1 1
8 D1
D1
G1 2
7 D1
S2 3
6 D2
D2
G2 4
5 D2
8-Lead DFN (dual pad)
(top view)
GATE
DRAIN
14
1
DRAIN
13
DRAIN
12
11 GATE
SOURCE 2
10 SOURCE
SOURCE 3
9 SOURCE
SOURCE 4
5
DRAIN
6
DRAIN
8 SOURCE
7
DRAIN
14-Lead QFN
(top view)
Typical Thermal Resistance
Package
TO-252 D-PAK1
θja
81OC/W
8-Lead DFN (dual pad)2
29OC/W
14-Lead QFN2
23OC/W
1. 4-layer, 1oz, 3x4inch PCB, with 20-via for drain pad.
2. 4-layer, 1oz, 3x4inch PCB, with 12-via for drain pad.
Doc.# DSFP-DN2625
C060313
Supertex inc.
www.supertex.com

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