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SIC02A120S Datasheet دیتاشیت PDF دانلود

دیتاشیت - Pan Jit International - SILICON CARBIDE SCHOTTKY DIODE

شماره قطعه SIC02A120S
شرح مفصل SILICON CARBIDE SCHOTTKY DIODE
تولید کننده Pan Jit International 
آرم Pan Jit International 


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SIC02A120S شرح
SiC02A120S
SILICON CARBIDE SCHOTTKY DIODE
Voltage 1200 V Current
2A
Features
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-252AA
Marking: 02A120S
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-252AA
Unit: inch(mm)
Maximum Ratings
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
(TP=10mS, Half Sine Wave, D=0.1)
SYMBOL
VRRM
VRSM
VR
IF(AV)
IFRM
TEST CONDITIONS
TJ=25oC
TJ=25oC
TJ=25oC
TC=25oC
TC=125oC
TC=165oC
TC=25oC
TC=125oC
VALUE
1200
1200
1200
9
5
2
19
16
UNITS
V
V
V
A
A
A
A
A
June 15,2016-REV.02
Page 1

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SIC02A120S SILICON CARBIDE SCHOTTKY DIODE Pan Jit International
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