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CG7501AA fiches techniques PDF

Cypress - 4-Mbit (512 K x 8) nvSRAM

Numéro de référence CG7501AA
Description 4-Mbit (512 K x 8) nvSRAM
Fabricant Cypress 
Logo Cypress 





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CG7501AA fiche technique
CG7501AA
4-Mbit (512 K × 8) nvSRAM
4-Mbit (512 K × 8/256 K × 16) nvSRAM
Features
45 ns access time
Internally organized as 512 K × 8
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap non-volatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
Infinite read, write, and recall cycles
1 million STORE cycles to QuantumTrap
20 year data retention
Single 3 V +20, –10operation
Industrial temperature
Package
48-ball fine-pitch ball grid array (FBGA)
Pb-free and restriction of hazardous substances (RoHS)
compliant
Functional Description
The Cypress CG7501AA is a fast static RAM (SRAM), with a
non-volatile element in each memory cell. The memory is
organized as 512 K bytes of 8 bits each. The embedded
non-volatile elements incorporate QuantumTrap technology,
producing the world’s most reliable non-volatile memory. The
SRAM provides infinite read and write cycles, while independent
non-volatile data resides in the highly reliable QuantumTrap cell.
Data transfers from the SRAM to the non-volatile elements (the
STORE operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the non-volatile memory. Both the STORE and RECALL
operations are also available under software control.
Logic Block Diagram
A0
A1
A2
A3
A4
A5
A6
A7
A8
A 17
A 18
DQ 0
DQ 1
DQ 2
DQ 3
DQ 4
DQ 5
DQ 6
DQ 7
QuantumTrap
2048 X 2048
STORE
STATIC RAM
ARRAY
2048 X 2048
RECALL
COLUMN I/O
COLUMN DEC
A9 A10 A11A12 A13A14A15 A16
VCC VCAP
POWER
CONTROL
STORE/RECALL
CONTROL
HSB
SOFTWARE
DETECT
-A14 A2
OE
CE
WE
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-82292 Rev. **
• San Jose, CA 95134-1709 • 408-943-2600
Revised September 5, 2012

PagesPages 20
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