DataSheetWiki


CY62148GN fiches techniques PDF

Cypress - 4-Mbit (512K x 8) Static RAM

Numéro de référence CY62148GN
Description 4-Mbit (512K x 8) Static RAM
Fabricant Cypress 
Logo Cypress 





1 Page

No Preview Available !





CY62148GN fiche technique
CY62148GN MoBL®
4-Mbit (512K × 8) Static RAM
4-Mbit (512K × 8) Static RAM
Features
Very high speed: 45 ns
Wide voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V
Ultra low standby power
Typical standby current: 3.5 µA
Maximum standby current: 8.7 µA
Easy memory expansion with CE and OE features
Automatic power-down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 32-pin thin small outline package (TSOP) II
and 32-pin small-outline integrated circuit (SOIC) packages
Functional Description
The CY62148GN is a high-performance CMOS static RAM
organized as 512K words by 8-bits. This device features
advanced circuit design to provide ultra low standby current. This
is ideal for providing More Battery Life™ (MoBL) in portable
Logic Block Diagram
applications. The device also has an automatic power-down
feature that significantly reduces power consumption when
addresses are not toggling. Placing the device in standby mode
reduces power consumption by more than 99% when deselected
(CE HIGH). The eight input and output pins (I/O0 through I/O7)
are placed in a high-impedance state when the device is
deselected (CE HIGH), Outputs are disabled (OE HIGH), or
during an active Write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7)
is then written into the location specified on the address pins (A0
through A18).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing Write Enable (WE) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins appear on the I/O pins.
For a complete list of related documentation, click here.
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
CE
WE
OE
INPUT BUFFER
512K x 8
ARRAY
COLUMN DECODER
POWER
DOWN
IIO/O00
IIO/O11
IIO/O22
IIO/O33
IIO/O44
IIO/O55
IIO/O66
IIO/O77
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-95418 Rev. *A
• San Jose, CA 95134-1709 • 408-943-2600
Revised January 19, 2016

PagesPages 16
Télécharger [ CY62148GN ]


Fiche technique recommandé

No Description détaillée Fabricant
CY62148G 4-Mbit (512K words x 8 bit) Static RAM Cypress Semiconductor
Cypress Semiconductor
CY62148GN 4-Mbit (512K x 8) Static RAM Cypress
Cypress

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche