|
|
Número de pieza | CY7C1011G | |
Descripción | 2-Mbit (128K words x 16 bit) Static RAM | |
Fabricantes | Cypress | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CY7C1011G (archivo pdf) en la parte inferior de esta página. Total 17 Páginas | ||
No Preview Available ! CY7C1011G Automotive
2-Mbit (128K words × 16 bit) Static RAM
with Error-Correcting Code (ECC)
2-Mbit (128K words × 16 bit) Static RAM with Error-Correcting Code (ECC)
Features
■ High speed
❐ tAA = 10 ns
■ Temperature range
❐ Automotive-A: –40 °C to 85 °C
❐ Automotive-E: –40 °C to 125 °C
■
Embedded
correction[1]
error-correcting
code
(ECC)
for
single-bit
error
■ Low active and standby current
❐ Active current, ICC = 40-mA typical (Automotive-E)
❐ Standby current, ISB2 = 6-mA typical (Automotive-E)
■ Operating voltage range: 2.2 V to 3.6 V
■ 1.0-V data retention
■ TTL compatible inputs and outputs
■ Available in Pb-free 48-ball VFBGA and 44-pin TSOP II
packages
Functional Description
CY7C1011G is a high-performance CMOS fast static RAM
automotive part with embedded ECC. This device has a single
Chip Enable (CE) input, and is accessed by asserting it LOW.
To perform data writes, assert the Write Enable (WE) input LOW,
and provide the data on the device data pins (I/O0 through I/O15)
and address pins (A0 through A16) pins. The Byte High Enable
(BHE) and Byte Low Enable (BLE) inputs control byte writes and
write data on the corresponding I/O lines to the memory location
specified. BHE controls I/O8 through I/O15 and BLE controls I/O0
through I/O7.
To perform data reads, assert the Output Enable (OE) input and
provide the required address on the address lines. You can
access read data on the I/O lines (I/O0 through I/O15). To perform
byte access, assert the required byte enable signal (BHE or BLE)
to read either the upper byte or the lower byte of data from the
specified address location.
All I/Os (I/O0 through I/O15) are placed in a high-impedance state
when the device is deselected (CE LOW), or when the control
signals are deasserted (OE, BLE, BHE).
Logic Block Diagram – CY7C1011G
ECC ENCODER
INPUT BUFFER
A0
A1
A2
A3
A4
MEMORY
A5 ARRAY
A6
A7
A8
A9
COLUMN DECODER
I/O0‐I/O7
I/O8‐I/O15
BHE
WE
CE
OE
BLE
Note
1. This device does not support automatic write-back on error detection.
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-95423 Rev. *B
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 23, 2015
1 page CY7C1011G Automotive
Capacitance
Parameter [5]
Description
CIN
COUT
Input capacitance
I/O capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VCC = VCC(typ)
All Packages
10
10
Unit
pF
pF
Thermal Resistance
Parameter [5]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
Still air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
48-ball VFBGA 44-pin TSOPII Unit
30.68
66.82
C/W
14.83
15.97
C/W
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms [6]
Output
Z0 = 50
(a)
* Capacitive load consists
of all components of the
test environment
50
30 pF*
VTH
VHIGH
90%
GND
10%
Rise Time:
> 1 V/ns
All Input Pulses
(c)
High-Z Characteristics:
VCC
Output
R1
5 pF*
* Including
jig and
scope
(b)
90%
10%
Fall Time:
> 1 V/ns
R2
Parameters
R1
R2
VTH
VHIGH
3.0 V
317
351
1.5
3
Unit
V
V
Notes
5. Tested initially and after any design or process change that may affect these parameters.
6. Full-device AC operation assumes a 100-µs ramp time from 0 to VCC(min) and a 100-µs wait time after VCC stabilization.
Document Number: 001-95423 Rev. *B
Page 5 of 17
5 Page CY7C1011G Automotive
Truth Table
CE OE WE BLE BHE I/O0–I/O7 I/O8–I/O15
Mode
H XX X
X HI-Z
HI-Z
Power-down
L LH L
L Data out Data out Read all bits
L L H L H Data out HI-Z
Read lower bits only
L L H H L HI-Z
Data out Read upper bits only
L XL L
L Data in Data in Write all bits
L
XL
L
H Data in HI-Z
Write lower bits only
L X L H L HI-Z
Data in Write upper bits only
L H H X X HI-Z
HI-Z
Selected, outputs disabled
Power
Standby (ISB)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Active (ICC)
Document Number: 001-95423 Rev. *B
Page 11 of 17
11 Page |
Páginas | Total 17 Páginas | |
PDF Descargar | [ Datasheet CY7C1011G.PDF ] |
Número de pieza | Descripción | Fabricantes |
CY7C1011BV33 | 128K x 16 Static RAM | Cypress Semiconductor |
CY7C1011CV33 | 128K x 16 Static RAM | Cypress Semiconductor |
CY7C1011DV33 | 2-Mbit (128K x 16)Static RAM | Cypress Semiconductor |
CY7C1011G | 2-Mbit (128K words x 16 bit) Static RAM | Cypress |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |