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AP80SL400AS fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP80SL400AS
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP80SL400AS fiche technique
Advanced Power
Electronics Corp.
AP80SL400AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Rg & UIS Test
Fast Switching Characteristic
D
Simple Drive Requirement
RoHS Compliant & Halogen-Free
G
S
Description
AP80SL400A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
VDS @ Tj,max.
RDS(ON)
ID
850V
0.4Ω
12A
GD
S
TO-263(S)
Absolute Maximum Ratings
.
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
dv/dt
PD@TC=25
PD@TA=25
EAS
dv/dt
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
Rating
800
+20
12
7.6
30
50
152
3.12
108
15
-55 to 150
-55 to 150
Units
V
V
A
A
A
V/ns
W
W
mJ
V/ns
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
0.82
40
Units
/W
/W
Data & specifications subject to change without notice
1
201505201

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