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Numéro de référence | AP80SL400AS | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP80SL400AS
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ 100% Rg & UIS Test
▼ Fast Switching Characteristic
D
▼ Simple Drive Requirement
▼ RoHS Compliant & Halogen-Free
G
S
Description
AP80SL400A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for high current application due to the low connection
resistance.
VDS @ Tj,max.
RDS(ON)
ID
850V
0.4Ω
12A
GD
S
TO-263(S)
Absolute Maximum Ratings
.
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
dv/dt
PD@TC=25℃
PD@TA=25℃
EAS
dv/dt
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
MOSFET dv/dt Ruggedness (VDS = 0 …400V )
Total Power Dissipation
Total Power Dissipation4
Single Pulse Avalanche Energy5
Peak Diode Recovery dv/dt6
Storage Temperature Range
Operating Junction Temperature Range
Rating
800
+20
12
7.6
30
50
152
3.12
108
15
-55 to 150
-55 to 150
Units
V
V
A
A
A
V/ns
W
W
mJ
V/ns
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Value
0.82
40
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201505201
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Pages | Pages 5 | ||
Télécharger | [ AP80SL400AS ] |
No | Description détaillée | Fabricant |
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