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APA2N70K-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence APA2N70K-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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APA2N70K-HF fiche technique
Advanced Power
Electronics Corp.
APA2N70K-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
Halogen Free & RoHS Compliant Product
D
SOT-223
S
D
G
BVDSS
RDS(ON)
ID
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching,low on-resistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 package.
G
600V
10Ω
0.35A
D
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
IDM
PD@TA=25
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V4
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
600
+30
0.35
1.4
2.7
0.5
1
-55 to 150
-55 to 150
V
V
A
A
W
mJ
A
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient4
Data & specifications subject to change without notice
Value
45
Unit
/W
1
201501134

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