(PDF) AP9926GM Datasheet - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP9926GM
Descripción	DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
Logotipo
Hay una vista previa y un enlace de descarga de AP9926GM (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! Advanced Power Electronics Corp. AP9926GM RoHS-compliant Product Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Capable of 2.5V gate drive ▼ Surface mount package D2 D2 D1 D1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 S2 G1 S1 G1 BVDSS RDS(ON) ID D1 G2 S1 20V 30mΩ 6A D2 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3,VGS @ 4.5V Continuous Drain Current3,VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 20 +12 6 4.8 26 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201005194 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet AP9926GM.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF AP9926GM Data sheet ( Hoja de datos )