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PDF AP9930AGM Data sheet ( Hoja de datos )
| Número de pieza | AP9930AGM | |
| Descripción | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP9930AGM
RoHS-compliant Product
2N AND 2P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Full Bridge Application on
LCD Monitor Inverter
▼ RoHS Compliant
Description
P2G
N2D/P2D
P1S/P2S
P1G
SO-8
N2G
N1S/N2S
N1D/P1D
N1G
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
35mΩ
5.2A
-30V
72mΩ
-3.5A
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
P1S P2S
P1G P2G
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
P1N1D
P2N2D
Absolute Maximum Ratings
Symbol
Parameter
N1G
N1S N2S
N2G
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
N-channel P-channel
30 -30
+20 +20
5.2 -3.5
4.1 -2.8
20 -20
1.38
-55 to 150
-55 to 150
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201004261
1 page  
N-Channel
10
I D =5A
V DS =15V
8
6
4
2
0
0 2 4 6 8 10 12
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 Operation in this
area limited by
RDS(ON)
100us
1ms
1
10ms
100ms
0.1 1s
T A =25 o C
Single Pulse
DC
0.01
0.01
0.1 1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
AP9930AGM
f=1.0MHz
800
600
C400 iss
200
C oss
C rss
0
1 5 9 13 17 21 25 29
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 186℃/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
5 Page | ||
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