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PDF AP9938GEY-HF Data sheet ( Hoja de datos )
| Número de pieza | AP9938GEY-HF | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP9938GEY-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 1.8V Gate Drive
▼ Lower on-resistance
▼ Surface Mount Package
▼ RoHS Compliant & Halogen-Free
D1/D2
2928-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
BVDSS
RDS(ON)
ID
D1
G1 G2
S1
20V
16mΩ
7.5A
D2
S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
20 V
+8 V
7.5 A
6A
40 A
1.38 W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201501273
1 page  
MARKING INFORMATION
AP9938GEY-HF
YY6YSS
Part Number : YY6
Date Code (YSS)
Y：Last Digit Of The Year
SS：Sequence
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP9938GEY-HF.PDF ] | |
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