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AP9960AGM-HF fiches techniques PDF

Advanced Power Electronics - DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP9960AGM-HF
Description DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP9960AGM-HF fiche technique
Advanced Power
Electronics Corp.
AP9960AGM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
Halogen Free & RoHS Compliant
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Description
AP9960 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
40V
16mΩ
8.7A
D2
S2
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
40 V
+20 V
8.7 A
7A
30 A
2W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201410031AP

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