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PDF AP9972GR-HF Data sheet ( Hoja de datos )

Número de pieza AP9972GR-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9972GR-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9972GR-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
D BVDSS
60V
RDS(ON)
18mΩ
G ID 60A
S
Description
AP9972 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G
DS
TO-262(R)
Absolute
Symbol
Maximum
RatingPsa@ramTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS Drain-Source Voltage
VGS Gate-Source Voltage
60 V
+25 V
ID@TC=25
ID@TC=100
IDM
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
60 A
38 A
230 A
PD@TC=25
EAS
IAR
TSTG
TJ
Total Power Dissipation
Single Pulse Avalanche Energy3
Avalanche Current3
Storage Temperature Range
Operating Junction Temperature Range
89
45
30
-55 to 150
-55 to 150
W
mJ
A
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
1.4
62
Units
/W
/W
1
201408284

1 page




AP9972GR-HF pdf
MARKING INFORMATION
AP9972GR-HF
9972GR
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
.
5

5 Page










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