(PDF) AP9975GM Datasheet - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Número de pieza	AP9975GM
Descripción	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes	Advanced Power Electronics
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No Preview Available ! Advanced Power Electronics Corp. AP9975GM RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ Surface Mount Package ▼ RoHS Compliant D2 D2 D1 D1 SO-8 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, lower on-resistance and cost-effectiveness. G2 S2 G1 S1 BVDSS RDS(ON) ID 60V 21mΩ 7.6A D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current3, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG Storage Temperature Range TJ Operating Junction Temperature Range Rating 60 +25 7.6 6.1 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Data and specifications subject to change without notice Value 62.5 Unit ℃/W 1 201011182 1 page

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PDF AP9975GM Data sheet ( Hoja de datos )