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PDF AP9976GM-HF Data sheet ( Hoja de datos )

Número de pieza AP9976GM-HF
Descripción DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9976GM-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9976GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Lower On-resistance
Simple Drive Requirement
Fast Switching Characteristic
D2
D2
D1
D1
RoHS Compliant & Halogen-Free
G2
S2
G1
S1
Description
AP9976 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
60V
20.5mΩ
7.6A
D2
S2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
60 V
+20 V
7.6 A
6A
40 A
2W
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501123

1 page




AP9976GM-HF pdf
MARKING INFORMATION
AP9976GM-HF
9976GM
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
5

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