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PDF AP9980GM-HF Data sheet ( Hoja de datos )

Número de pieza AP9980GM-HF
Descripción DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP9980GM-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP9980GM-HF
Halogen-Free Product
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Low Gate Charge
Simple Drive Requirement
Surface Mount Package
RoHS Compliant & Halogen-Free
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
BVDSS
RDS(ON)
ID
80V
52mΩ
4.6A
Description
AP9980 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
G1
D1
G2
D2
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
S1 S2
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Single Pulse Avalanche Energy4
Storage Temperature Range
Operating Junction Temperature Range
80
+20
4.6
2.9
30
2
3.2
-55 to 150
-55 to 150
V
V
A
A
A
W
mJ
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201501123

1 page




AP9980GM-HF pdf
MARKING INFORMATION
AP9980GM-HF
9980GM
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
5

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