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PDF AP9980GM Data sheet ( Hoja de datos )
| Número de pieza | AP9980GM | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP9980GM (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Advanced Power
Electronics Corp.
AP9980GM
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
▼ Single Drive Requirement
▼ Surface Mount Package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
80V
52mΩ
4.6A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Rating
80
+20
4.6
2.9
30
2
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
℃
℃
Unit
℃/W
Data and specifications subject to change without notice
1
200808191
1 page  
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8 7 65
1
2
34
e
B
E1
E
SYMBOLS
A
A1
B
c
D
E1
E
L
θ
e
Millimeters
MIN
1.35
NOM
1.55
MAX
1.75
0.10 0.18 0.25
0.33 0.41 0.51
0.19 0.22 0.25
4.80 4.90 5.00
3.80 3.90 4.00
5.80 6.15 6.50
0.38 0.71 1.27
0.00 4.00 8.00
1.27 TYP
A1
c
A
DETAIL A
DETAIL A
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
θ
Part Marking Information & Packing : SO-8
9980GM
YWWSSS
Part Number
meet Rohs requirement
Package Code for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AP9980GM.PDF ] | |
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