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PDF AP2451GY-HF Data sheet ( Hoja de datos )
| Número de pieza | AP2451GY-HF | |
| Descripción | P AND N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP2451GY-HF
Halogen-Free Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Capable of 2.5V Gate Drive
▼ Lower on-resistance
▼ Surface Mount Package
D2
D2
D1
D1
▼ RoHS Compliant & Halogen-Free
2928-8
G2
S2
G1
S1
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
The 2928-8 J-lead package provides good on-resistance
performance and space saving like TSOP-6.
G1
G2
S1
20V
37mΩ
5A
-20V
75mΩ
-3.7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
.
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3 , VGS @ 4.5V
Drain Current3 , VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
N-channel P-channel
20 -20
+12 +12
5 -3.7
4 -3
20 -20
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
90
Unit
℃/W
1
201411283
1 page  
N-Channel
10
ID=5A
8 V DS = 16 V
6
4
2
0
0 4 8 12 16 20
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
AP2451GY-HF
f=1.0MHz
1000
C iss
C100 oss
C rss
10
1 5 9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
100
10
100us
1ms
1
10ms
0.1
T A =25 o C
Single Pulse
100ms
1s
DC
0.01
0.1
1 10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.1
0.05
. 0.02
0.01
Single Pulse
0.01
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =155oC/W
0.001
0.0001
0.001
0.01 0.1 1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
30
V DS =5V
T j =25 o C
20
T j =150 o C
10
VG
4.5V
QG
QGS
QGD
0
024
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
Charge
Q
Fig 12. Gate Charge Waveform
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AP2451GY-HF.PDF ] | |
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