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PDF AP2604CDT Data sheet ( Hoja de datos )
| Número de pieza | AP2604CDT | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de AP2604CDT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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Advanced Power
Electronics Corp.
AP2604CDT
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ 100% Rg & UIS Test
▼ Ultra Low On-resistance
▼ RoHS Compliant & Halogen-Free
G
Description
AP2604C series are from Advanced Power innovated
design and silicon process technology to achieve the lowest
possible on-resistance and fast switching performance. It
provides the designer with an extreme efficient device for
use in a wide range of power applications.
D BVDSS
RDS(ON)
ID4
25V
0.65mΩ
375A
S
PDFN 5x6
D DDD
The PDFN 5x6 package used advanced package and
silicon combination for ultra low on-resistance and high
efficiency, special for DC-DC converters application and the
foot print is compatible with SO-8 with backside heat sink
and lower profile.
GS S S
Bottom View
Top View
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TC=25℃
PD@TA=25℃
EAS
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Chip), VGS @ 10V4
Drain Current, VGS @ 10V4(Package Limited)
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Single Pulse Avalanche Energy5
Storage Temperature Range
Operating Junction Temperature Range
25
+20
375
100
71
57
650
138.8
5
714
-55 to 150
-55 to 150
V
V
A
A
A
A
A
W
W
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
0.9
25
Unit
℃/W
℃/W
1
201508171
1 page  
AP2604CDT
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
4
T j =25 o C
3
160
120
80
40
0
0 50 100
T C , Case Temperature( o C)
Fig 14. Total Power Dissipation
150
.2
1
4.5V
V GS =10V
0
0 20 40 60 80 100 120
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AP2604CDT.PDF ] | |
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