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AP2613GYT-HF fiches techniques PDF

Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP2613GYT-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP2613GYT-HF fiche technique
Advanced Power
Electronics Corp.
AP2613GYT-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Capable of 1.8V Gate Drive
Small Size & Lower Profile
RoHS Compliant & Halogen-Free
D
G
Description
S
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The PMPAK® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
BVDSS
RDS(ON)
ID
-20V
9mΩ
-15.4A
D
D
D
D
S
S
S
G
PMPAK® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-20
+8
-15.4
-12.3
-50
3.12
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
5
40
Unit
/W
/W
1
201304242

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