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AP2613GY-HF fiches techniques PDF

Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP2613GY-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP2613GY-HF fiche technique
Advanced Power
Electronics Corp.
AP2613GY-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Lower Gate Charge
Small Footprint & Low Profile Package
RoHS Compliant & Halogen-Free
G
D
S
Description
AP2613 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID3
-20V
37mΩ
- 6.2A
S
D
D
SOT-26
G
D
D
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current3, VGS @ 4.5V
Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
- 20
+8
-6.2
-4.9
-24
2
-55 to 150
-55 to 150
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201411062

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